| PART |
Description |
Maker |
| BSC039N06NS-12 |
OptiMOSTM Power-Transistor
|
Infineon Technologies A...
|
| BSZ160N10N3SG |
OptiMOSTM 3 Power-Transistor
|
Infineon Technologies AG
|
| BSC065N06LS5 |
OptiMOSTM Power-Transistor, 60 V
|
Infineon Technologies A...
|
| IPD068P03L3G |
OptiMOSTM P3 Power-Transistor
|
Infineon Technologies AG
|
| IPD033N06N |
OptiMOSTM Power-Transistor, 60 V
|
Infineon Technologies A...
|
| BSC010N04LST |
OptiMOSTM Power-MOSFET, 40 V
|
Infineon Technologies A...
|
| IPB020N10N5LF |
OptiMOSTM 5 Linear FET, 100 V
|
Infineon Technologies A...
|
| BSZ018NE2LSI |
OptiMOSTM Power-MOSFET
|
Infineon Technologies A...
|
| IPP100N04S2-04 IPB100N04S2-04 SP0002-19061 SP0002- |
OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管
OptiMOS? Power-Transistor
OptiMOS㈢ Power-Transistor
100 A, 40 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB GREEN, PLASTIC, TO-220, 3 PIN
|
Infineon Technologies AG
|
| IPI25N06S3L-22 IPB25N06S3L-22 IPP25N06S3L-22 SP000 |
OptiMOS?-T Power-Transistor
OPTIMOS⑶-T POWER-TRANSISTOR
OptiMOS㈢-T Power-Transistor
OptiMOST Power-Transistor
|
Infineon Technologies AG
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
